佳佑儀器

首頁 > 產品介紹 > 電性量測 & 液晶量測設備 > 正/負型光阻 & 顯影液

電性量測 & 液晶量測設備

正/負型光阻 & 顯影液

GM 1040

SU-8-negative tone photo-epoxy

for layers from 0.8 to 5 μm

Technical Datasheet

商品說明

SU-8 is an epoxy based, chemically amplified resist system with excellent sensitivity and high aspect ratios. The primary applications are Micro-fabricated Mechanical Structures (MEMS) and other Microsystems.

Examples are sensors, micro-fluidic components, electronic coils, inkjet print head nozzles, multi-chip modules, actuators, LCD spacers and moulds for plastic, stamps for hot embossing and electroplating.

Datasheet parts…

1 / Schematics of the process

2 / Process description

3 / Process parameters

4 / Processing GM1040 – Overview

5 / Typical processes (1μm, 2μm, 3μm, 4μm, 5μm and 10μm)

6 / Troubleshooting

Typical processes (1.0 μm, 2, 3, 4, 5 and 10 μm)

Firstly, the wafer preparation should be as mentioned previously (Oxygen plasma at 500W for min 7min (for some cleaned wafers yet)…). Thickness	0.8μm	1.0μm	2.0μm	3.0μm	4.0μm	5.0μm
Spin coating 40s at …	5000 rpm	3500 rpm	1600 rpm	1100 rpm	800 rpm	650 rpm
Relax. Time*	-	5 min	5 min	10 min	10 min	10 min
Pre-bake	2 min @65°C, 2 min @95°C	5 min @65°C, 5 min @95°C	5 min @65°C, 5 min @95°C	5 min @65°C, 10 min @95°C	5 min @65°C, 15 min @95°C	5 min @65°C, 15 min @95°C
Typical Exposure dose mJ/cm2	80	100	220	250	280	290
Post-Bake	5 min @65°C, 5 min @95°C	5 min @65°C, 5 min @95°C	5 min @65°C, 5 min @95°C	5 min @65°C, 10 min @95°C	5 min @65°C, 15 min @95°C	5 min @65°C, 15 min @95°C
Delay time	10 min	10 min	10 min	10 min	10 min	10 min
Develop in PGMEA**	10 s	20 s	30 s	40 s	50 s	1 min
Hard Bake (option)	2h @135°C	2h @135°C	2h @135°C	2h @135°C	2h @135°C	2h @135°C

Part #	Description/ Type
RER-600	SU-8光組顯影液
	* 容量:1加崙/瓶

GM1040-1	* Layers for 1-10um 500mL

GM1040-2	* Layers for 1-10um 1L

GM1060-1	* Layers for 10-50um 500mL

GM1060-2	* Layers for 10-50um 1L

GM1070-1	* Layers for 50-500um 500mL

GM1070-2	* Layers for 50-500um 1L

返回列表

產品分類

電性量測 & 液晶量測設備